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A Product Line of
Diodes Incorporated
DMC4050SSD
Electrical Characteristics N-CHANNEL
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
40
-
-
-
-
-
-
1.0
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 40V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 8)
V GS(th)
R DS (ON)
|Y fs |
V SD
0.8
-
-
-
1.3
20
33
12.6
0.7
1.8
45
60
-
1.0
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 3A
V GS = 4.5V, I D = 3A
V DS = 5V, I D = 3A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
1790.8
160.6
120.5
1.03
37.56
7.8
6.6
8.08
15.14
24.29
5.27
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V DS = 20V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 10V, V DS = 20V,
I D = 3A
V GS = 10V, V DS = 20V,
I D = 3A
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
30
30
25
20
15
V GS = 8.0V
V GS = 4.5V
25
20
15
V DS = 5V
V GS = 4.0V
10
10
5
V GS = 2.5V
V GS = 3.5V
V GS = 3.0V
5
T A = 150°C
T A = 125°C
T A = 85°C
T A = 25°C
T A = -55°C
0
0
0.5 1 1.5
2
0
0
1 2 3 4
5
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMC4050SSD
Document number: DS33310 Rev. 2 - 2
4 of 11
www.diodes.com
March 2011
? Diodes Incorporated
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